CSD17306Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Feedback Cap-Max (Crss) :

73 pF

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

7.8 ns

Number of Elements :

1

Vgs (Max) :

+10V, -8V

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0054Ohm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Factory Lead Time :

16 Weeks

Height :

1.1mm

Nominal Vgs :

1.1 V

Base Part Number :

CSD17306

Series :

NexFET™

Power Dissipation-Max :

3.2W Ta

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

10V

Fall Time (Typ) :

6.4 ns

Mount :

Surface Mount

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Continuous Drain Current (ID) :

100A

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

274 mJ

Threshold Voltage :

1.1V

Current - Continuous Drain (Id) @ 25°C :

24A Ta 100A Tc

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

15.3nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

18.4 ns

Number of Terminations :

5

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Length :

4.9mm

Power Dissipation :

3.2W

Rise Time :

13.1ns

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 22A, 8V

Package / Case :

8-PowerTDFN

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2170pF @ 15V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Thickness :

1mm

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Number of Pins :

8

Lead Free :

Contains Lead

Width :

6mm

Pbfree Code :

yes