CJD122 TR13
- Mfr.Part #
- CJD122 TR13
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A DPAK
- Stock
- 48,178
- In Stock :
- 48,178
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- HTS Code :
- 8541.29.00.95
- Mounting Type :
- Surface Mount
- VCEsat-Max :
- 4 V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 4MHz
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 5 Weeks
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Packaging :
- Cut Tape (CT)
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Number of Terminations :
- 2
- Power Dissipation Ambient-Max :
- 20W
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Published :
- 2016
- JESD-609 Code :
- e3
- Current - Collector (Ic) (Max) :
- 8A
- Current - Collector Cutoff (Max) :
- 10μA
- Surface Mount :
- yes
- Transition Frequency :
- 4MHz
- Power Dissipation-Max (Abs) :
- 20W
- Transistor Type :
- NPN - Darlington
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- Collector-Base Capacitance-Max :
- 200pF
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Power - Max :
- 1.75W
- Datasheets
- CJD122 TR13
NPN - Darlington -65°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
CJD122 TR13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 4A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 80mA, 8A.The part has a transition frequency of 4MHz.Device displays Collector Emitter Breakdown (100V maximal voltage).
CJD122 TR13 Features
the DC current gain for this device is 1000 @ 4A 4V
the vce saturation(Max) is 4V @ 80mA, 8A
a transition frequency of 4MHz
CJD122 TR13 Applications
There are a lot of Central Semiconductor Corp
CJD122 TR13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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