BSP43,115
- Mfr.Part #
- BSP43,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 28,579
- In Stock :
- 28,579
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 30
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Height :
- 6.35mm
- Package / Case :
- TO-261-4, TO-261AA
- Pin Count :
- 4
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Number of Pins :
- 4
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 90V
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 1.3W
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 1.3W
- Contact Plating :
- Tin
- Max Collector Current :
- 1A
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Width :
- 6.35mm
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- JESD-609 Code :
- e3
- Weight :
- 4.535924g
- Base Part Number :
- BSP43
- Max Breakdown Voltage :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Frequency :
- 100MHz
- Published :
- 2009
- Polarity/Channel Type :
- NPN
- Length :
- 6.35mm
- Datasheets
- BSP43,115

NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP43,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 1A volts.
BSP43,115 Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BSP43,115 Applications
There are a lot of Nexperia USA Inc.
BSP43,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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