BSP135H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Terminal Position :

Dual

Current :

12A

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Fall Time (Typ) :

182 ns

Recovery Time :

130 ns

ECCN Code :

EAR99

Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

RoHS Status :

ROHS3 Compliant

Width :

3.5mm

Series :

SIPMOS®

Published :

2012

Rise Time :

5.6ns

Pin Count :

4

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

146pF @ 25V

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Depletion Mode

Vgs(th) (Max) @ Id :

1V @ 94µA

Terminal Form :

Gull wing

Pbfree Code :

yes

JESD-609 Code :

e3

FET Type :

N-Channel

Height :

1.5mm

Radiation Hardening :

No

Max Dual Supply Voltage :

600V

Continuous Drain Current (ID) :

120mA

Lead Free :

Lead Free

Halogen Free :

Halogen Free

Package / Case :

TO-261-4, TO-261AA

Element Configuration :

Single

Factory Lead Time :

10 Weeks

Rds On (Max) @ Id, Vgs :

45 Ω @ 120mA, 10V

Drain to Source Breakdown Voltage :

600V

Power Dissipation :

1.8W

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Number of Terminations :

4

Turn-Off Delay Time :

28 ns

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

1.8W Ta

Length :

6.5mm

Gate Charge (Qg) (Max) @ Vgs :

4.9nC @ 5V

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Turn On Delay Time :

5.4 ns

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V