BSP135 E6906

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

0.3A

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Series :

SIPMOS®

DS Breakdown Voltage-Min :

600V

Vgs (Max) :

±20V

Terminal Position :

Dual

Power Dissipation-Max :

1.8W Ta

Pin Count :

4

Rds On (Max) @ Id, Vgs :

45 Ω @ 120mA, 10V

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G4

Published :

2007

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Vgs(th) (Max) @ Id :

1V @ 94µA

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

60Ohm

Number of Terminations :

4

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

4.9nC @ 5V

Drain Current-Max (Abs) (ID) :

0.1A

HTS Code :

8541.29.00.95

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

600V

Package / Case :

TO-261-4, TO-261AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

146pF @ 25V

Terminal Form :

Gull wing

FET Feature :

Depletion Mode

Surface Mount :

yes

Transistor Element Material :

SILICON

FET Type :

N-Channel

Case Connection :

DRAIN