BSC0993NDATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

68A

Rds On (Max) @ Id, Vgs :

5m Ω @ 7A, 10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

17A Ta

Avalanche Energy Rating (Eas) :

14 mJ

Published :

2013

JESD-30 Code :

R-PDSO-N6

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 N-Channel

Reach Compliance Code :

not_compliant

Terminal Position :

Dual

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Factory Lead Time :

18 Weeks

FET Feature :

Standard

Drain Current-Max (Abs) (ID) :

17A

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Number of Elements :

2

Number of Terminations :

6

Terminal Form :

NO LEAD

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

2V @ 250μA

Package / Case :

8-PowerTDFN

Drain-source On Resistance-Max :

0.007Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™

Transistor Element Material :

SILICON