BR25H640FJ-2CE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Write Cycle Time - Word, Page :

4ms

Length :

4.9mm

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Memory Type :

Non-Volatile

Write Protection :

HARDWARE/SOFTWARE

Supply Voltage-Min (Vsup) :

4.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Density :

65536 bit

Packaging :

Cut Tape (CT)

Power Supplies :

3/5V

REACH SVHC :

Unknown

Memory Width :

8

Terminal Position :

Dual

Operating Mode :

SYNCHRONOUS

Voltage - Supply :

2.5V~5.5V

Supply Voltage :

5V

Factory Lead Time :

16 Weeks

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Memory Interface :

SPI

Memory Size :

64Kb 8K x 8

Data Retention Time-Min :

100

Endurance :

1000000 Write/Erase Cycles

Operating Temperature :

-40°C~125°C TA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

RoHS Status :

ROHS3 Compliant

Clock Frequency :

10MHz

Width :

3.9mm

Terminal Pitch :

1.27mm

Parallel/Serial :

Serial

Supply Voltage-Max (Vsup) :

5.5V

Qualification Status :

Not Qualified

Height Seated (Max) :

1.65mm

Serial Bus Type :

SPI

Additional Feature :

ALSO OPERATES AT 2.5V WITH 5MHZ AND SEATED HT-CALCULATED

Standby Current-Max :

0.00001A

Supply Current-Max :

0.0055mA

Number of Functions :

1

Series :

Automotive, AEC-Q100

Mounting Type :

Surface Mount

Memory Format :

EEPROM

Number of Pins :

8

Write Cycle Time-Max (tWC) :

4ms

Number of Terminations :

8