BFP420H6801XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

1.5V

Terminal Position :

Dual

Max Power Dissipation :

160mW

Number of Pins :

4

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 20mA 4V

Polarity/Channel Type :

NPN

Package / Case :

SC-82A, SOT-343

Noise Figure (dB Typ @ f) :

1.1dB @ 1.8GHz

Power Dissipation :

160mW

Transistor Application :

AMPLIFIER

Max Collector Current :

35mA

Transition Frequency :

25000MHz

Terminal Form :

Gull wing

Number of Terminations :

4

Contact Plating :

Tin

Collector-Base Capacitance-Max :

0.3pF

Collector Base Voltage (VCBO) :

15V

Additional Feature :

HIGH RELIABILITY, LOW NOISE

Frequency :

25GHz

RoHS Status :

ROHS3 Compliant

Published :

2007

Configuration :

Single

Number of Elements :

1

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

35mA

Collector Emitter Breakdown Voltage :

5V

Base Part Number :

BFP420

Factory Lead Time :

4 Weeks

Gain :

21dB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

4.5V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount