BD435STU
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- Mfr.Part #
- BD435STU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 4A TO126-3
- Stock
- 4,640
- In Stock ：
- 4,640
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 4A
- Power Dissipation :
- 36W
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Weight :
- 760.986249mg
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- Current :
- 4A
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tube
- Package / Case :
- TO-225AA, TO-126-3
- Voltage - Rated DC :
- 32V
- Current - Collector Cutoff (Max) :
- 100μA
- Max Power Dissipation :
- 36W
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Current Rating :
- 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 5V
- Frequency :
- 3MHz
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 200mV
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Voltage :
- 32V
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2017
- Collector Base Voltage (VCBO) :
- 32V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 32V
- Base Part Number :
- BD435
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 32V
- Mount :
- Through Hole
- Element Configuration :
- Single
- hFE Min :
- 40
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Transition Frequency :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Number of Pins :
- 3
- Factory Lead Time :
- 12 Weeks
- Datasheets
- BD435STU
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD435STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 5V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD435STU Features
the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD435STU Applications
There are a lot of ON Semiconductor
BD435STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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