BD243C
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- Mfr.Part #
- BD243C
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A TO220
- Stock
- 29,583
- In Stock ：
- 29,583
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 65W
- Gain Bandwidth Product :
- 3MHz
- Factory Lead Time :
- 6 Weeks
- Height :
- 15.75mm
- Surface Mount :
- No
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 1.5V
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 700µA
- Base Part Number :
- BD243
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 6A
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.28mm
- Collector Emitter Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Transition Frequency :
- 3MHz
- Max Collector Current :
- 6A
- hFE Min :
- 30
- Published :
- 2004
- Power Dissipation :
- 65W
- Packaging :
- Tube
- Radiation Hardening :
- No
- Current Rating :
- 6A
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Frequency :
- 3MHz
- Width :
- 4.82mm
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 100V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 100V
- Datasheets
- BD243C
NPN -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD243CG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1A, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 6A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 6A volts.
BD243CG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
BD243CG Applications
There are a lot of ON Semiconductor
BD243CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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