BCX41E6327HTSA1
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- Mfr.Part #
- BCX41E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 125V 0.8A SOT23
- Stock
- 27,050
- In Stock ：
- 27,050
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 900mV
- ECCN Code :
- EAR99
- Width :
- 1.3mm
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 125V
- Number of Terminations :
- 3
- Height :
- 900μm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Max Breakdown Voltage :
- 125V
- Published :
- 2011
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Halogen Free :
- Not Halogen Free
- Transition Frequency :
- 100MHz
- Power Dissipation :
- 330mW
- Operating Temperature :
- 150°C TJ
- Current Rating :
- 800mA
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 10μA
- Max Power Dissipation :
- 330mW
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 125V
- Transistor Element Material :
- SILICON
- Current :
- 8A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 30mA, 300mA
- Length :
- 2.9mm
- Voltage :
- 125V
- Collector Emitter Breakdown Voltage :
- 125V
- Max Collector Current :
- 800mA
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 1V
- hFE Min :
- 63
- Terminal Form :
- Gull wing
- Base Part Number :
- BCX41
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Datasheets
- BCX41E6327HTSA1
NPN 150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX41E6327HTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 200mA 1V.With a collector emitter saturation voltage of 900mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 900mV @ 30mA, 300mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 800mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 125V volts that it can take.Collector current can be as low as 800mA volts at its maximum.
BCX41E6327HTSA1 Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCX41E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCX41E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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