BCR35PNH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Halogen Free :

Halogen Free

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

JESD-609 Code :

e3

Pin Count :

6

Number of Pins :

6

Min Operating Temperature :

-65°C

Mounting Type :

Surface Mount

Mount :

Surface Mount

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Collector Emitter Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

26 Weeks

Element Configuration :

Dual

Transition Frequency :

150MHz

Lead Free :

Lead Free

Max Breakdown Voltage :

50V

Terminal Form :

Gull wing

Resistor - Emitter Base (R2) :

47k Ω

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Height :

800μm

Frequency - Transition :

150MHz

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Package / Case :

6-VSSOP, SC-88, SOT-363

hFE Min :

70

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 5V

Resistor - Base (R1) :

10k Ω

RoHS Status :

ROHS3 Compliant

Polarity :

NPN, PNP

Max Operating Temperature :

150°C

Length :

2mm

Max Power Dissipation :

250mW

Base Part Number :

BCR35PN

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

300mV

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

300mV

Reference Standard :

AEC-Q101

Width :

1.25mm

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Published :

2011

Number of Terminations :

6