BC857BTT1G
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- Mfr.Part #
- BC857BTT1G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SC75 SOT416
- Stock
- 29,964
- In Stock ：
- 29,964
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Collector Base Voltage (VCBO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 100MHz
- Width :
- 900μm
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -650mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -45V
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Published :
- 2009
- hFE Min :
- 150
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 45V
- Transistor Type :
- PNP
- Height :
- 900μm
- Factory Lead Time :
- 8 Weeks
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 100MHz
- Base Part Number :
- BC857*TT
- Number of Pins :
- 3
- Max Power Dissipation :
- 200mW
- Max Collector Current :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Power - Max :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Power Dissipation :
- 300mW
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Current Rating :
- -100mA
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 1.65mm
- Lead Free :
- Lead Free
- Package / Case :
- SC-75, SOT-416
- Datasheets
- BC857BTT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount
BC857BTT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC857BTT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BTT1G Applications
There are a lot of ON Semiconductor
BC857BTT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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