BC857BQAZ
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- Mfr.Part #
- BC857BQAZ
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- NEXPERIA BC857 - 45 V, 100 MA PN
- Stock
- 5,931
- In Stock ：
- 5,931
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Package / Case :
- 3-XDFN Exposed Pad
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Power Dissipation :
- 280mW
- JESD-30 Code :
- R-PDSO-N3
- Transistor Application :
- SWITCHING
- Terminal Form :
- NO LEAD
- Reference Standard :
- AEC-Q101; IEC-60134
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Published :
- 2014
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Max Breakdown Voltage :
- 45V
- Power - Max :
- 280mW
- Mount :
- Surface Mount
- Frequency - Transition :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 45V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 400mV
- Series :
- Automotive, AEC-Q101
- Configuration :
- Single
- Datasheets
- BC857BQAZ
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
BC857BQAZ Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC857BQAZ Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC857BQAZ Applications
There are a lot of Nexperia USA Inc.
BC857BQAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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