BC857BM,315
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- Mfr.Part #
- BC857BM,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT883
- Stock
- 25
- In Stock ：
- 25
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Collector Base Voltage (VCBO) :
- 50V
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BC857
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Supplier Device Package :
- DFN1006-3
- Max Operating Temperature :
- 150°C
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Current - Collector (Ic) (Max) :
- 100mA
- Factory Lead Time :
- 8 Weeks
- Min Operating Temperature :
- -65°C
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 100MHz
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Series :
- Automotive, AEC-Q101
- Mount :
- Surface Mount
- Polarity :
- PNP
- Power - Max :
- 150mW
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-101, SOT-883
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Published :
- 2009
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Power Dissipation :
- 430mW
- Number of Elements :
- 1
- Power Dissipation :
- 430mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- BC857BM,315
PNP 150°C TJ 15nA ICBO 1 Elements SC-101, SOT-883 Tape & Reel (TR) Surface Mount
BC857BM,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.DFN1006-3 is the supplier device package for this product.This device displays a 45V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 100mA volts.
BC857BM,315 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the supplier device package of DFN1006-3
BC857BM,315 Applications
There are a lot of Nexperia USA Inc.
BC857BM,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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