BC857BLT3G
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- Mfr.Part #
- BC857BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 40,877
- In Stock ：
- 40,877
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Max Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Published :
- 2005
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Surface Mount :
- yes
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 300mW
- Voltage - Rated DC :
- -45V
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- -100mA
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 220
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Saturation Voltage :
- -650mV
- Mounting Type :
- Surface Mount
- Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Datasheets
- BC857BLT3G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857BLT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.The collector emitter saturation voltage is -650mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC857BLT3G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BLT3G Applications
There are a lot of ON Semiconductor
BC857BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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