BC857BLT1
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- Mfr.Part #
- BC857BLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 100MA SOT23
- Stock
- 92,803
- In Stock ：
- 92,803
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 50V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Length :
- 2.9mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Published :
- 2005
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Packaging :
- Cut Tape (CT)
- Frequency :
- 100MHz
- Width :
- 1.3mm
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 45V
- Transition Frequency :
- 100MHz
- Height :
- 940μm
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 300mW
- Current Rating :
- -100mA
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -650mV
- Contact Plating :
- Tin
- hFE Min :
- 220
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -45V
- Datasheets
- BC857BLT1
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC857BLT1G Overview
DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC857BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BLT1G Applications
There are a lot of ON Semiconductor
BC857BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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