BC857BLP4-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

45V

Terminal Position :

BOTTOM

Base Part Number :

BC857BLP4

Element Configuration :

Single

ECCN Code :

EAR99

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

15nA ICBO

Max Power Dissipation :

250mW

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

hFE Min :

220

Terminal Form :

NO LEAD

Number of Elements :

1

JESD-609 Code :

e4

Case Connection :

COLLECTOR

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

45V

Package / Case :

3-XFDFN

Gain Bandwidth Product :

100MHz

REACH SVHC :

No SVHC

Power - Max :

250mW

Max Collector Current :

100mA

Height :

350μm

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

15 Weeks

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Published :

2011

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Polarity/Channel Type :

PNP

Pbfree Code :

yes

Width :

600μm

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

100MHz

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Length :

1mm

Number of Terminations :

3

Contact Plating :

Gold

Collector Emitter Breakdown Voltage :

45V

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

50V