BC857BFZ-7B
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- Mfr.Part #
- BC857BFZ-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A 3DFN
- Stock
- 81
- In Stock ：
- 81
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 500mV
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 100mA
- Max Breakdown Voltage :
- 45V
- Frequency - Transition :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Transition Frequency :
- 270MHz
- Power - Max :
- 435mW
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Continuous Collector Current :
- -100mA
- Collector Emitter Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- PNP
- Terminal Form :
- NO LEAD
- JESD-609 Code :
- e4
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- hFE Min :
- 220
- Current - Collector Cutoff (Max) :
- 15nA
- Max Power Dissipation :
- 435mW
- Package / Case :
- 3-XFDFN
- Gain Bandwidth Product :
- 200MHz
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- -250mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2015
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Collector Base Voltage (VCBO) :
- -50V
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Datasheets
- BC857BFZ-7B
PNP -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON PNP 3-XFDFN Tape & Reel (TR) Surface Mount
BC857BFZ-7B Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 100mA.A -100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 270MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC857BFZ-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 270MHz
BC857BFZ-7B Applications
There are a lot of Diodes Incorporated
BC857BFZ-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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