BC857AMTF
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- Mfr.Part #
- BC857AMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 39,817
- In Stock ：
- 39,817
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 12 hours ago)
- Published :
- 2004
- Voltage - Rated DC :
- -45V
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Length :
- 2.9mm
- Collector Emitter Voltage (VCEO) :
- 45V
- hFE Min :
- 110
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Frequency :
- 150MHz
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Current Rating :
- -100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 36 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- -5V
- Max Power Dissipation :
- 310mW
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Weight :
- 30mg
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- -50V
- Height :
- 930μm
- Collector Emitter Saturation Voltage :
- -250mV
- Width :
- 1.3mm
- Base Part Number :
- BC857
- Gain Bandwidth Product :
- 150MHz
- Max Breakdown Voltage :
- 45V
- Transition Frequency :
- 150MHz
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Power Dissipation :
- 310mW
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 100mA
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Pbfree Code :
- yes
- Datasheets
- BC857AMTF
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857AMTF Overview
DC current gain in this device equals 110 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC857AMTF Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC857AMTF Applications
There are a lot of ON Semiconductor
BC857AMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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