BC847BMTF
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- Mfr.Part #
- BC847BMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 2,769
- In Stock ：
- 2,769
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 50V
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 300MHz
- RoHS Status :
- RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Width :
- 1.3mm
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- BC847
- Voltage - Rated DC :
- 45V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Weight :
- 30mg
- Terminal Position :
- Dual
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 45V
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 930μm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- Transition Frequency :
- 300MHz
- Max Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 310mW
- Collector Emitter Saturation Voltage :
- 200mV
- Length :
- 2.92mm
- Current Rating :
- 100mA
- Frequency :
- 300MHz
- Max Power Dissipation :
- 310mW
- hFE Min :
- 110
- Datasheets
- BC847BMTF
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847BMTF Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC847BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC847BMTF Applications
There are a lot of ON Semiconductor
BC847BMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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