BC847BMB,315
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- Mfr.Part #
- BC847BMB,315
- Manufacturer
- Nexperia
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A DFN1006B-3
- Stock
- 26,518
- In Stock ：
- 26,518
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Base Part Number :
- BC847
- Package / Case :
- 3-XFDFN
- Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Series :
- Automotive, AEC-Q101
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Max Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 250mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 200
- Transistor Application :
- SWITCHING
- Published :
- 2011
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 250mW
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 200mV
- Transition Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Datasheets
- BC847BMB,315
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847BMB,315 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847BMB,315 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BMB,315 Applications
There are a lot of Nexperia USA Inc.
BC847BMB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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