BC847BLT1
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- Mfr.Part #
- BC847BLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 100MA SOT23
- Stock
- 24,934
- In Stock ：
- 24,934
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Width :
- 1.397mm
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 45V
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 50V
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Power Dissipation :
- 300mW
- Packaging :
- Cut Tape (CT)
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Length :
- 3.0226mm
- Max Power Dissipation :
- 300mW
- Current Rating :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Collector Current :
- 100mA
- Surface Mount :
- yes
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 4 Weeks
- Max Breakdown Voltage :
- 45V
- Published :
- 2005
- Halogen Free :
- Halogen Free
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Pbfree Code :
- yes
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 600mV
- Type :
- GENERAL PURPOSE
- hFE Min :
- 200
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Height :
- 1.016mm
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BC847BLT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC847BLT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC847BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847BLT1G Applications
There are a lot of ON Semiconductor
BC847BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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