BC847BLP4-7B
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- Mfr.Part #
- BC847BLP4-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A 3DFN
- Stock
- 15,256
- In Stock ：
- 15,256
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Published :
- 2011
- Radiation Hardening :
- No
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BC847
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 100mA
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Package / Case :
- 3-XFDFN
- JESD-609 Code :
- e4
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Base Voltage (VCBO) :
- 50V
- Max Breakdown Voltage :
- 45V
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mounting Type :
- Surface Mount
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 600mV
- Max Power Dissipation :
- 250mW
- Continuous Collector Current :
- 100mA
- Datasheets
- BC847BLP4-7B
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847BLP4-7B Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 100mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC847BLP4-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BLP4-7B Applications
There are a lot of Diodes Incorporated
BC847BLP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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