BC847BLP-7B
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- Mfr.Part #
- BC847BLP-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A 3DFN
- Stock
- 5,468
- In Stock ：
- 5,468
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- NO LEAD
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Gold
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Continuous Collector Current :
- 100mA
- Package / Case :
- 3-UFDFN
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Saturation Voltage :
- 600mV
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Power Dissipation :
- 250mW
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 100mA
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 15 Weeks
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Case Connection :
- COLLECTOR
- Base Part Number :
- BC847
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- High Reliability
- JESD-609 Code :
- e4
- Number of Pins :
- 3
- Published :
- 2000
- Datasheets
- BC847BLP-7B
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UFDFN Tape & Reel (TR) Surface Mount
BC847BLP-7B Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.A 100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC847BLP-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BLP-7B Applications
There are a lot of Diodes Incorporated
BC847BLP-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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