BC847BFA-7B
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- Mfr.Part #
- BC847BFA-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A X2-DFN0806-3
- Stock
- 36,992
- In Stock ：
- 36,992
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Width :
- 850μm
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2013
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 170MHz
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Max Junction Temperature (Tj) :
- 150°C
- Package / Case :
- 3-XFDFN
- REACH SVHC :
- No SVHC
- Length :
- 650μm
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- High Reliability
- Transition Frequency :
- 170MHz
- Collector Emitter Saturation Voltage :
- 122mV
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Base Voltage (VCBO) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Dissipation :
- 435mW
- Height :
- 400μm
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Gold
- Terminal Form :
- NO LEAD
- hFE Min :
- 200
- JESD-609 Code :
- e4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Max Power Dissipation :
- 435mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Breakdown Voltage :
- 150V
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Factory Lead Time :
- 15 Weeks
- Max Breakdown Voltage :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC847BFA-7B
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847BFA-7B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 122mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 170MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847BFA-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 122mV
the vce saturation(Max) is 300mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 170MHz
BC847BFA-7B Applications
There are a lot of Diodes Incorporated
BC847BFA-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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