BC847B
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- Mfr.Part #
- BC847B
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- BJT SOT-23 45V 100MA
- Stock
- 18,927
- In Stock ：
- 18,927
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Current - Collector (Ic) (Max) :
- 100mA
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Emitter Saturation Voltage :
- 90mV
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 45V
- Width :
- 1.4mm
- Max Breakdown Voltage :
- 45V
- Max Collector Current :
- 200mA
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- High Reliability
- Contact Plating :
- Tin
- Length :
- 3.05mm
- Published :
- 2012
- Pin Count :
- 3
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Max Junction Temperature (Tj) :
- 150°C
- Power Dissipation :
- 310mW
- Gain Bandwidth Product :
- 300MHz
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 19 Weeks
- Current - Collector Cutoff (Max) :
- 15nA
- hFE Min :
- 200
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BC847
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transition Frequency :
- 300MHz
- Weight :
- 7.994566mg
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 300mW
- Height :
- 1.1mm
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Datasheets
- BC847B
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847B-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
BC847B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC847B-7-F Applications
There are a lot of Diodes Incorporated
BC847B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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