BC847AW,135
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- Mfr.Part #
- BC847AW,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC847AW - SMALL SIG
- Stock
- 200,000
- In Stock ：
- 200,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Published :
- 2014
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Max Collector Current :
- 100mA
- Base Part Number :
- BC847
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Power Dissipation :
- 200mW
- Max Power Dissipation :
- 200mW
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Frequency :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Package / Case :
- SC-70, SOT-323
- Datasheets
- BC847AW,135
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847AW,135 Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC847AW,135 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847AW,135 Applications
There are a lot of Nexperia USA Inc.
BC847AW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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