BC847AMB,315
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- Mfr.Part #
- BC847AMB,315
- Manufacturer
- Nexperia
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A DFN1006B-3
- Stock
- 38,716
- In Stock ：
- 38,716
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Frequency - Transition :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2011
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Base Voltage (VCBO) :
- 50V
- Power - Max :
- 250mW
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Terminal Form :
- NO LEAD
- Mounting Type :
- Surface Mount
- Package / Case :
- 3-XFDFN
- Max Power Dissipation :
- 250mW
- Series :
- Automotive, AEC-Q101
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 500μA, 10mA
- Collector Emitter Voltage (VCEO) :
- 200mV
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Base Part Number :
- BC847
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- BC847AMB,315
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847AMB,315 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.When VCE saturation is 200mV @ 500μA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.A maximum collector current of 100mA volts can be achieved.
BC847AMB,315 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 200mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847AMB,315 Applications
There are a lot of Nexperia USA Inc.
BC847AMB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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