BC847,215
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- Mfr.Part #
- BC847,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR NPN 45V 100MA SOT23
- Stock
- 1,618
- In Stock ：
- 1,618
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Transistor Type :
- NPN
- hFE Min :
- 110
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 50V
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Published :
- 2008
- Ambient Temperature Range High :
- 150°C
- Max Power Dissipation :
- 250mW
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Termination :
- SMD/SMT
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Base Part Number :
- BC847
- Max Breakdown Voltage :
- 45V
- Gain Bandwidth Product :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Power Dissipation :
- 250mW
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Length :
- 3mm
- Width :
- 1.4mm
- Collector Emitter Saturation Voltage :
- 200mV
- Contact Plating :
- Tin
- Height :
- 1.1mm
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 150°C
- Collector Emitter Breakdown Voltage :
- 45V
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Max Collector Current :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Datasheets
- BC847,215
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC847,215 Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847,215 Applications
There are a lot of Nexperia USA Inc.
BC847,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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