BC846BWT1G
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- Mfr.Part #
- BC846BWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SC70-3
- Stock
- 3,733
- In Stock ：
- 3,733
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 150mW
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 65V
- Factory Lead Time :
- 5 Weeks
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- JESD-609 Code :
- e3
- Length :
- 2.2mm
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- AMPLIFIER
- Packaging :
- Cut Tape (CT)
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 80V
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 65V
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Published :
- 2005
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Height :
- 900μm
- Max Power Dissipation :
- 150mW
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 600mV
- Halogen Free :
- Halogen Free
- Voltage - Rated DC :
- 65V
- Package / Case :
- SC-70, SOT-323
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 150
- Surface Mount :
- yes
- Current Rating :
- 100mA
- Collector Emitter Breakdown Voltage :
- 65V
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 1.35mm
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Datasheets
- BC846BWT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Cut Tape (CT) Surface Mount
BC846BWT1G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).100MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC846BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC846BWT1G Applications
There are a lot of ON Semiconductor
BC846BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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