BC846BLT3G
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- Mfr.Part #
- BC846BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 2,923
- In Stock ：
- 2,923
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Published :
- 2007
- Radiation Hardening :
- No
- Max Power Dissipation :
- 300mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Pin Count :
- 3
- hFE Min :
- 200
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 65V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 65V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 600mV
- Current Rating :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Length :
- 2.9mm
- Width :
- 1.3mm
- Max Breakdown Voltage :
- 65V
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Halogen Free :
- Halogen Free
- Frequency :
- 100MHz
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 80V
- Gain Bandwidth Product :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 65V
- Height :
- 1mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BC846BLT3G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846BLT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 65V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC846BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC846BLT3G Applications
There are a lot of ON Semiconductor
BC846BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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