BC846BLP4-7B
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- Mfr.Part #
- BC846BLP4-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A 3DFN
- Stock
- 11,013
- In Stock ：
- 11,013
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 300MHz
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Length :
- 1.05mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Continuous Collector Current :
- 200mA
- Collector Emitter Saturation Voltage :
- 220mV
- Published :
- 2017
- Emitter Base Voltage (VEBO) :
- 6V
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- NO LEAD
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e4
- Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 65V
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- High Reliability
- Contact Plating :
- Gold
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Transition Frequency :
- 300MHz
- Current - Collector Cutoff (Max) :
- 15nA
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 1W
- Package / Case :
- 3-XFDFN
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 65V
- Frequency :
- 300MHz
- Base Part Number :
- BC846
- Collector Base Voltage (VCBO) :
- 80V
- Height :
- 350μm
- Polarity/Channel Type :
- NPN
- Width :
- 650μm
- Collector Emitter Breakdown Voltage :
- 65V
- Power - Max :
- 410mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- BC846BLP4-7B
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC846BLP4-7B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 220mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 200mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 65V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC846BLP4-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846BLP4-7B Applications
There are a lot of Diodes Incorporated
BC846BLP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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