BC846ALT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

Published :

2005

Voltage - Rated DC :

65V

Number of Elements :

1

Pbfree Code :

yes

Current Rating :

100mA

Mounting Type :

Surface Mount

Max Collector Current :

100mA

Collector Base Voltage (VCBO) :

80V

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Emitter Voltage (VCEO) :

65V

Number of Pins :

3

Gain Bandwidth Product :

100MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 2mA 5V

Element Configuration :

Single

Transition Frequency :

100MHz

Emitter Base Voltage (VEBO) :

6V

hFE Min :

110

REACH SVHC :

No SVHC

Length :

2.9mm

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

65V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Frequency :

100MHz

Collector Emitter Saturation Voltage :

600mV

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Height :

940μm

Transistor Application :

SWITCHING

Max Breakdown Voltage :

65V

Lead Free :

Lead Free

Terminal Position :

Dual

Polarity/Channel Type :

NPN

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Transistor Type :

NPN

Width :

1.3mm

JESD-609 Code :

e3

Max Power Dissipation :

300mW

Contact Plating :

Tin

Package / Case :

TO-236-3, SC-59, SOT-23-3