BC81816MTF
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- Mfr.Part #
- BC81816MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A SOT23-3
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Factory Lead Time :
- 6 Weeks
- Length :
- 2.9mm
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 700mV
- Published :
- 2008
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 100mA 1V
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 25V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Height :
- 930μm
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Base Part Number :
- BC818
- Max Breakdown Voltage :
- 25V
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Power Dissipation :
- 310mW
- hFE Min :
- 100
- Number of Terminations :
- 3
- Width :
- 1.3mm
- Max Power Dissipation :
- 310mW
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Voltage (VCEO) :
- 25V
- Weight :
- 30mg
- Frequency :
- 100MHz
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 800mA
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 30V
- JESD-609 Code :
- e3
- Datasheets
- BC81816MTF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81816MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 800mA volts.
BC81816MTF Features
the DC current gain for this device is 110 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81816MTF Applications
There are a lot of ON Semiconductor
BC81816MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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