BC81816MTF
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- Mfr.Part #
- BC81816MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A SOT23-3
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Factory Lead Time :
- 6 Weeks
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 100mA 1V
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 25V
- Max Power Dissipation :
- 310mW
- Max Breakdown Voltage :
- 25V
- Polarity/Channel Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Width :
- 1.3mm
- Collector Base Voltage (VCBO) :
- 30V
- Base Part Number :
- BC818
- Weight :
- 30mg
- Current - Collector Cutoff (Max) :
- 100nA
- hFE Min :
- 100
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- Dual
- Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 25V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Published :
- 2008
- Power Dissipation :
- 310mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 930μm
- Number of Elements :
- 1
- Length :
- 2.9mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- 700mV
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Pbfree Code :
- yes
- Max Collector Current :
- 800mA
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Datasheets
- BC81816MTF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81816MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 800mA volts.
BC81816MTF Features
the DC current gain for this device is 110 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81816MTF Applications
There are a lot of ON Semiconductor
BC81816MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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