BC81725MTF
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- Mfr.Part #
- BC81725MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 75,697
- In Stock ：
- 75,697
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Current :
- 8A
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 50V
- Length :
- 2.9mm
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 700mV
- Max Power Dissipation :
- 310mW
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 100MHz
- Weight :
- 59.987591mg
- Published :
- 2004
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 100
- Width :
- 1.3mm
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Voltage :
- 45V
- Power Dissipation :
- 310mW
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Height :
- 970μm
- Base Part Number :
- BC817
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 45V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Max Collector Current :
- 800mA
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Datasheets
- BC81725MTF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81725MTF Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BC81725MTF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81725MTF Applications
There are a lot of ON Semiconductor
BC81725MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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