BC81725MTF
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- Mfr.Part #
- BC81725MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 75,697
- In Stock ：
- 75,697
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Published :
- 2004
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 59.987591mg
- Transition Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 310mW
- Frequency :
- 100MHz
- hFE Min :
- 100
- Current :
- 8A
- Max Power Dissipation :
- 310mW
- Width :
- 1.3mm
- Collector Base Voltage (VCBO) :
- 50V
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BC817
- Height :
- 970μm
- Pbfree Code :
- yes
- Voltage :
- 45V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Length :
- 2.9mm
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Saturation Voltage :
- 700mV
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Max Collector Current :
- 800mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 45V
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- BC81725MTF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81725MTF Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BC81725MTF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81725MTF Applications
There are a lot of ON Semiconductor
BC81725MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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