BC817-40WT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100nA ICBO

Power - Max :

460mW

Lifecycle Status :

ACTIVE (Last Updated: 9 hours ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transition Frequency :

100MHz

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Number of Elements :

1

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100mA 1V

Collector Base Voltage (VCBO) :

50V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

700mV

Frequency - Transition :

100MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Transistor Type :

NPN

Published :

2001

Terminal Position :

Dual

Package / Case :

SC-70, SOT-323

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

8 Weeks

Max Collector Current :

500mA

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G3

ECCN Code :

EAR99

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

45V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Max Power Dissipation :

460mW