BC80840MTF
- Mfr.Part #
- BC80840MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.8A SOT23-3
- Stock
- 56,581
- In Stock :
- 56,581
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 6 Weeks
- Frequency :
- 100MHz
- Number of Pins :
- 3
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 310mW
- Length :
- 2.9mm
- Power Dissipation :
- 310mW
- Collector Emitter Voltage (VCEO) :
- 25V
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Published :
- 2002
- Polarity/Channel Type :
- PNP
- Weight :
- 30mg
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- Transistor Type :
- PNP
- Height :
- 970μm
- Max Collector Current :
- 800mA
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Form :
- Gull wing
- Width :
- 1.3mm
- Max Breakdown Voltage :
- 25V
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Collector Base Voltage (VCBO) :
- -30V
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- -5V
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 100
- Base Part Number :
- BC808
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -700mV
- Collector Emitter Breakdown Voltage :
- 25V
- Qualification Status :
- Not Qualified
- Datasheets
- BC80840MTF

PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80840MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80840MTF Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80840MTF Applications
There are a lot of ON Semiconductor
BC80840MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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