BC558BZL1G
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- Mfr.Part #
- BC558BZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92
- Stock
- 27,704
- In Stock ：
- 27,704
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -100mA
- Collector Emitter Saturation Voltage :
- -300mV
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 360MHz
- JESD-609 Code :
- e1
- Collector Base Voltage (VCBO) :
- -30V
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 100mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Frequency :
- 360MHz
- Qualification Status :
- Not Qualified
- Additional Feature :
- EUROPEAN PART NUMBER
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Packaging :
- Tape and Box (TB)
- hFE Min :
- 180
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 650mV
- Transistor Element Material :
- SILICON
- Base Part Number :
- BC558
- Mounting Type :
- Through Hole
- Published :
- 2007
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Reach Compliance Code :
- Unknown
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -30V
- Power Dissipation :
- 625mW
- Pin Count :
- 3
- Transition Frequency :
- 360MHz
- Datasheets
- BC558BZL1G
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC558BZL1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 360MHz.During maximum operation, collector current can be as low as 100mA volts.
BC558BZL1G Features
the DC current gain for this device is 180 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 360MHz
BC558BZL1G Applications
There are a lot of ON Semiconductor
BC558BZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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