BC546BZL1
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- Mfr.Part #
- BC546BZL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A TO92
- Stock
- 11,815
- In Stock ：
- 11,815
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 100mA
- HTS Code :
- 8541.21.00.75
- Base Part Number :
- BC546
- RoHS Status :
- Non-RoHS Compliant
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2005
- Additional Feature :
- EUROPEAN PART NUMBER
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Max Power Dissipation :
- 625mW
- Pin Count :
- 3
- ECCN Code :
- EAR99
- hFE Min :
- 200
- Collector Emitter Saturation Voltage :
- 300mV
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- Transition Frequency :
- 300MHz
- Voltage - Rated DC :
- 65V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lead Free :
- Contains Lead
- Peak Reflow Temperature (Cel) :
- 235
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Voltage (VCEO) :
- 250mV
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Box (TB)
- Collector Emitter Breakdown Voltage :
- 65V
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 15nA
- Gain Bandwidth Product :
- 300MHz
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Datasheets
- BC546BZL1
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC546BZL1 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 500μA, 10mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC546BZL1 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC546BZL1 Applications
There are a lot of ON Semiconductor
BC546BZL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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