BC546BTF
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- Mfr.Part #
- BC546BTF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A TO92-3
- Stock
- 23,972
- In Stock ：
- 23,972
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 6 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 65V
- Max Breakdown Voltage :
- 65V
- Width :
- 3.86mm
- Voltage - Rated DC :
- 65V
- Height :
- 4.58mm
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Published :
- 2002
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 300MHz
- Weight :
- 240mg
- hFE Min :
- 110
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 100mA
- Base Part Number :
- BC546
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Additional Feature :
- LOW NOISE
- Transition Frequency :
- 300MHz
- Length :
- 4.58mm
- Collector Emitter Saturation Voltage :
- 250mV
- Power Dissipation :
- 500mW
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 65V
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 500mW
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Datasheets
- BC546BTF
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC546BTF Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC546BTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC546BTF Applications
There are a lot of ON Semiconductor
BC546BTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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