BC32725TA
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- Mfr.Part #
- BC32725TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A TO92-3
- Stock
- 531
- In Stock ：
- 531
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 100
- Collector Emitter Saturation Voltage :
- -700mV
- Length :
- 5.2mm
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Base Part Number :
- BC327
- Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- -45V
- Width :
- 4.19mm
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Box (TB)
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Factory Lead Time :
- 6 Weeks
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Elements :
- 1
- Published :
- 2007
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Height :
- 5.33mm
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 800mA
- Current :
- 500mA
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 45V
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -50V
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Weight :
- 240.007063mg
- Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Radiation Hardening :
- No
- Current Rating :
- -800mA
- Element Configuration :
- Single
- Datasheets
- BC32725TA
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC32725TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.With a collector emitter saturation voltage of -700mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -800mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 800mA volts at its maximum.
BC32725TA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BC32725TA Applications
There are a lot of ON Semiconductor
BC32725TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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