AUIRF7343QTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

2W

Height :

1.5mm

Number of Terminations :

8

Factory Lead Time :

26 Weeks

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

4.7A 3.4A

Number of Pins :

8

Lead Free :

Lead Free

Published :

2011

Mounting Type :

Surface Mount

Threshold Voltage :

1V

Drain Current-Max (Abs) (ID) :

4.7A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

4mm

FET Type :

N and P-Channel

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.05Ohm

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Drain to Source Breakdown Voltage :

55V

Transistor Application :

SWITCHING

Power Dissipation :

2W

Rds On (Max) @ Id, Vgs :

50m Ω @ 4.7A, 10V

Continuous Drain Current (ID) :

3.4A

Radiation Hardening :

No

Length :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Mount :

Surface Mount

Nominal Vgs :

1 V

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Elements :

2

JESD-609 Code :

e3