AUIRF7342QTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

2W

Max Power Dissipation :

2W

Length :

5mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Turn-Off Delay Time :

43 ns

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Fall Time (Typ) :

22 ns

Series :

Automotive, AEC-Q101, HEXFET®

Width :

4mm

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

55V

Drain to Source Breakdown Voltage :

-55V

FET Type :

2 P-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Continuous Drain Current (ID) :

3.4A

Radiation Hardening :

No

Turn On Delay Time :

14 ns

Transistor Element Material :

SILICON

Rise Time :

10ns

FET Feature :

Logic Level Gate

Published :

2011

Avalanche Energy Rating (Eas) :

114 mJ

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Number of Terminations :

8

Drain-source On Resistance-Max :

0.105Ohm

REACH SVHC :

No SVHC

Factory Lead Time :

10 Weeks

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

-1V

Height :

1.5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Number of Elements :

2