AUIRF7309QTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

FET Type :

N and P-Channel

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

3A

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Max Power Dissipation :

1.4W

Transistor Application :

SWITCHING

Number of Pins :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Elements :

2

Power Dissipation :

1.4W

Radiation Hardening :

No

REACH SVHC :

No SVHC

Mount :

Surface Mount

Length :

5mm

Nominal Vgs :

1 V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

16A

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

4A 3A

Additional Feature :

High Reliability

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 15V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.4A, 10V

Drain-source On Resistance-Max :

0.05Ohm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Height :

1.5mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

4A

Factory Lead Time :

8 Weeks

Published :

2011

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Number of Terminations :

8

Mounting Type :

Surface Mount

Width :

4mm