AS4C32M16D1-5BCN

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Mfr.Part #
AS4C32M16D1-5BCN
Manufacturer
Alliance Memory, Inc.
Package / Case
60-TFBGA
Datasheet
Download
Description
IC DRAM 512MBIT PARALLEL 60BGA
Stock
20,616
In Stock :
20,616

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Manufacturer :
Alliance Memory, Inc.
Product Category :
Memory
Access Time :
700ps
Additional Feature :
AUTO/SELF REFRESH
Supply Voltage :
2.5V
Clock Frequency :
200MHz
Packaging :
Tray
Published :
2013
Memory Width :
16
Mounting Type :
Surface Mount
Number of Terminations :
60
Supply Voltage-Min (Vsup) :
2.3V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height Seated (Max) :
1.2mm
Memory Format :
DRAM
Memory Interface :
Parallel
Operating Supply Voltage :
2.5V
Terminal Position :
BOTTOM
RoHS Status :
ROHS3 Compliant
Memory Type :
Volatile
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
SYNCHRONOUS
Supply Voltage-Max (Vsup) :
2.7V
Organization :
32MX16
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Lead Free :
Lead Free
Number of Functions :
1
Operating Temperature :
0°C~70°C TA
Surface Mount :
yes
ECCN Code :
EAR99
Address Bus Width :
13b
Number of Pins :
60
Voltage - Supply :
2.3V~2.7V
Write Cycle Time - Word, Page :
15ns
Density :
512 Mb
Memory Size :
512Mb 32M x 16
Length :
13mm
Number of Ports :
1
Package / Case :
60-TFBGA
Factory Lead Time :
8 Weeks
Datasheets
AS4C32M16D1-5BCN
Introducing Memory Alliance Memory, Inc. AS4C32M16D1-5BCN from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:60, Operating Temperature:0°C~70°C TA, Number of Pins:60, Package / Case:60-TFBGA, AS4C32M16D1-5BCN pinout, AS4C32M16D1-5BCN datasheet PDF, AS4C32M16D1-5BCN amp .Beyond Memory Alliance Memory, Inc. AS4C32M16D1-5BCN ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Alliance Memory, Inc. AS4C32M16D1-5BCN


Memory Alliance Memory, Inc. AS4C32M16D1-5BCN Overview

The Memory Alliance Memory, Inc. AS4C32M16D1-5BCN is a high-capacity, dynamic random-access memory (DRAM) module designed for high-performance applications requiring large memory storage and fast access times. This 512Mbit DRAM module utilizes a parallel interface for efficient data transfer and is encapsulated in a compact 60-ball grid array (BGA) package. It is an ideal solution for B2B customers looking to enhance the capabilities of their advanced computing systems, communications infrastructure, and other technology-driven applications.

AS4C32M16D1-5BCN Features

The AS4C32M16D1-5BCN IC DRAM module by Alliance Memory, Inc. boasts several key features that make it a robust choice for a variety of demanding applications. These features include a large memory capacity of 512Mbit, a parallel interface for rapid data access and throughput, and a space-saving 60BGA package that ensures a minimal footprint on system boards. Its high reliability and extended temperature range make it suitable for both industrial and commercial applications requiring durable and stable memory solutions.

AS4C32M16D1-5BCN Applications

  • Advanced Computing Systems: Utilizes its high-speed parallel interface and large storage capacity to manage complex computations and processes efficiently.
  • Telecommunications Equipment: Supports high-speed data transmission and storage necessary for modern telecommunications systems.
  • Automotive Electronics: Enhances performance in navigation systems, infotainment, and driver assistance systems that require robust memory solutions.
  • Industrial Automation: Provides reliable and stable memory for control systems that operate in variable and harsh environments.
  • Consumer Electronics: Powers a wide range of consumer electronics, from gaming consoles to smart TVs, requiring high memory bandwidth and storage.
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