APTM50H10FT3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Chassis Mount, Screw

Number of Elements :

4

JESD-30 Code :

R-XUFM-X25

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

500V

FET Feature :

Standard

Radiation Hardening :

No

Power Dissipation :

312W

JESD-609 Code :

e1

Transistor Application :

SWITCHING

Number of Terminations :

25

Rise Time :

21ns

Gate to Source Voltage (Vgs) :

30V

DS Breakdown Voltage-Min :

500V

Package / Case :

SP3

Turn On Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

4 N-Channel (H-Bridge)

Terminal Form :

UNSPECIFIED

Factory Lead Time :

36 Weeks

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Packaging :

Bulk

Avalanche Energy Rating (Eas) :

1600 mJ

Terminal Finish :

TIN SILVER COPPER

Pin Count :

25

Rds On (Max) @ Id, Vgs :

120m Ω @ 18.5A, 10V

Operating Temperature :

-40°C~150°C TJ

Fall Time (Typ) :

52 ns

Configuration :

COMPLEX

Turn-Off Delay Time :

73 ns

Pbfree Code :

yes

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Published :

2006

Max Power Dissipation :

312W

Input Capacitance (Ciss) (Max) @ Vds :

4367pF @ 25V

Terminal Position :

UPPER

Vgs(th) (Max) @ Id :

5V @ 1mA

Continuous Drain Current (ID) :

37A

Mounting Type :

Chassis Mount

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.12Ohm

Additional Feature :

AVALANCHE RATED