APTM20SKM10TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

694W Tc

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 5mA

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-40°C~150°C TJ

Power Dissipation :

694W

Terminal Form :

UNSPECIFIED

Terminal Position :

UPPER

Mount :

Chassis Mount, Screw

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Mounting Type :

Chassis Mount

Pulsed Drain Current-Max (IDM) :

700A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

12

Number of Elements :

1

Continuous Drain Current (ID) :

175A

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

200V

Pin Count :

12

Rds On (Max) @ Id, Vgs :

12m Ω @ 87.5A, 10V

Transistor Element Material :

SILICON

Published :

2016

ECCN Code :

EAR99

Number of Pins :

4

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

200V

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

175A Tc

Package / Case :

SP4

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

224nC @ 10V

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

2500 mJ

Packaging :

Bulk